 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * * * * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps FZT851 FZT853 C E C B PARTMARKING DETAILS COMPLEMENTARY TYPES - DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg FZT851 150 60 6 20 6 3 -55 to +150 FZT853 200 100 6 10 UNIT V V V A A W C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 260 FZT851 ELECTRICAL CHARACTERISTICS (at T amb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. 150 150 60 6 TYP. 220 220 85 8 50 1 50 1 10 50 100 170 375 1200 1150 100 100 75 25 200 200 120 50 130 45 45 1100 MAX. UNIT V V V V nA A nA A nA mV mV mV mV mV mV CONDITIONS. I C=100A I C =1A, RB 1k I C=10mA* I E=100A V CB=120V V CB=120V, T amb=100C V CB=120V V CB=120V, T amb=100C V EB=6V I C=0.1A, I B=5mA* I C=1A, I B=50mA* I C=2A, I B=50mA* I C=6A, I B=300mA* I C=6A, I B=300mA* I C =6A, V CE=1V* I C=10mA, V CE=1V I C=2A, V CE=1V* I C=5A, V CE=1V* I C=10A, V CE=1V* MHz pF ns ns I C=100mA, V CE=10V f=50MHz V CB=10V, f=1MHz I C=1A, I B1=100mA I B2=100mA, V CC=10V Collector Cut-Off Current I CER R 1k I EBO Emitter Cut-Off Current Collector-Emitter Saturation V CE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times V BE(sat) V BE(on) h FE 300 fT C obo t on t off *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 261 FZT851 TYPICAL CHARACTERISTICS 0.8 1.6 hFE - Normalised Gain 0.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=1V 200 0.4 IC/IB=10 IC/IB=50 100 0.2 0 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=1V 2.0 2.0 VBE(sat) - (Volts) VBE - (Volts) 1.5 IC/IB=10 IC/IB=50 1.0 1.5 1.0 0.5 0.001 0.01 0.1 1 10 100 0.5 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC Single Pulse Test Tamb=25 C 100 VBE(on) v IC IC - Collector Current (A) 10 1 DC 1s 100ms 10ms 1ms 100s 0.1 0.1 1 10 100 VCE - Collector Voltage (V) Safe Operating Area 3 - 262 hFE - Typical Gain VCE(sat) - (Volts) 1.4 300 |
Price & Availability of FZT851
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |